Data for reference ren-apl-74-1117

Valence-band structure of wurtzite GaN including the spin-orbit interaction

GB Ren, YM Liu, P Blood

Applied Physics Letters 74(8), 1117 (1999).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item cites the following items in the database:

  1. InGaN MQW Structure Laser Diodes with Cleaved Mirror Facets
  2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-LayerSuperlattices
  3. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
  4. k.p method for strained wurtzite semiconductors
  5. Effective-mass Hamiltonian for strained wurtzite GaN and analytical solutions
  6. Valence subband structures of wurtzite GaN/AlGaN quantum wells
  7. Envelope-function formalism for valence bands in wurtzite quantum wells
  8. First-principles calculations of effective-mass parameters of AlN and GaN

Contributed by YC Yeo from fujikun.eecs.berkeley.edu. on Thursday, February 25, 1999 8:36:56 PM

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