Data for reference ng-apl-73-821

The role of dislocation scattering in n-type GaN films

H. M. Ng, D. Doppalapudi, T. D. Moustakas, N. G. Weimann, L. F. Eastman

Applied Physics Letters 73(6), 821 (1998).

The decrease in mobility with decreasing carrier concentration is attributed to the dislocation scattering.

This item is cited by the following items in the database:

  1. Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers

Contributed by A submitted manuscript, on Wednesday, December 20, 2000 1:40:09 PM

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