Data for reference youtsey-apl-73-797

Gallium Nitride whiskers formed by selective photoenhanced wet etching of dislocations

C. Youtsey, L. T. Romano, I. Adesida

Applied Physics Letters 73, 797 (1998).

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This item is cited by the following items in the database:

  1. Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
  2. Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures

Contributed by A submitted manuscript, on Friday, April 6, 2001 1:30:29 PM

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