Data for reference rouviere-apl-73-668

Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

J. L. Rouviere, J. L. Weyher, M. Seelmann-Eggebert, S. Porowski

Applied Physics Letters 73(5), 668 (1998).

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This item is cited by the following items in the database:

  1. Preparation of stoichiometric GaN(0001)-1×1: an XPS study
  2. Core-Level Photoemission From Stoichiometric GaN(0001)-1×1

Contributed by A submitted manuscript, on Thursday, January 22, 2004 10:57:52 AM

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