Data for reference delucca-apl-73-3402

Ohmic Contacts Formed by Electrodeposition and Physical Vapor Deposition on p-GaN

J. M. DeLucca, H. S. Venugopalan, S. E. Mohney, R. F. Karlicek, Jr.

Applied Physics Letters 73(23), 3402 (1998).

Ohmic contacts prepared by electrodeposition, sputtering, and evaporation of late transition metals onto p-type GaN have been studied. The contacts that exhibited the most linear I-V characteristics were Pt contacts prepared by electrodeposition after a 1 min anneal at 600¡C. This 600¡C anneal followed successive anneals of 400¡C for 5 min and 500¡C for 1 min. Sputtered Ni/Pt contacts were nearly as good. Several possible reasons for the improved electrical characteristics of the electrodeposited Pt and sputtered Ni/Pt contacts compared to a variety of other metallization schemes were discussed.

Contributed by Hari S. Venugopalan from contact.metsce.psu.edu. on Wednesday, February 3, 1999 10:49:23 AM

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