Data for reference hsu-apl-73-339

Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/AlxGa1–xN interfaces

L. Hsu, W. Walukiewicz

Applied Physics Letters 73, 339 (1998).

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This item is cited by the following items in the database:

  1. Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells

Contributed by A submitted manuscript, on Wednesday, July 28, 1999 11:28:10 AM

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