Data for reference boettcher-apl-73-3232

Incorporation of indium during molecular beam epitaxy of InGaN

T Boettcher, S Einfeldt, V Kirchner, S Figge, H Heinke, D Hommel, H Selke, PL Ryder

Applied Physics Letters 73(22), 3232 (1998).

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This item is cited by the following items in the database:

  1. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory

Contributed by R. M. Feenstra from 128.2.24.220 on Monday, June 4, 2001 1:21:49 PM

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