Data for reference edwards-apl-73-2808

Trends in residual stress for GaN/AlN/6H-SiC heterostructures

NV Edwards, MD Bremser, RF Davis, AD Batchelor, SD Yoo, CF Karan, DE Aspnes

Applied Physics Letters 73, 2808 (1998).

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This item is cited by the following items in the database:

  1. Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.

Contributed by Anders Gustafsson from 130.235.95.183 on Tuesday, March 19, 2002 12:28:54 PM

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