Data for reference perlin-apl-73-2778

InGaN/GaN quantum well studied by high pressure, variable temperature, and excitation power spectroscopy

P. Perlin, C. Kisielowski, V. Iota, B. Weinstein, L. Mattos, N.A. Shapiro, J. Kruger, E.R. Weber, J. Yang

Applied Physics Letters 73(19), 2778 (1998).

The paper explains very large "blue" power induced shift of photoluminescence in InGaN/GaN quantum wells in terms of the screening of piezoelectric field by the photo-excited carriers. The structural and optical data indicates clearly very large strain ans pseudomorphic character of the wells with In content as high as 15%. the piezoelectric field

This item is cited by the following items in the database:

  1. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
  2. The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells

Contributed by Piotr Perlin from cavity.wins.lbl.gov. on Monday, November 9, 1998 7:03:32 PM

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