Data for reference wetzel-apl-73-1994

Optical band gap in GaInN (0 < x < 0.2) on GaN by photoreflection spectroscopy

C Wetzel, T Takeuchi, S Yamaguchi, H Katoh, H Amano, I Akasaki

Applied Physics Letters 73(14), 1994 (1998).

Thin films of pseudomorphic Ga1-xInxN/GaN (0 < x< 0.2) single heterostructures have been investigated by photoreflection spectroscopy and photoluminescence. The optical band gap at room temperature has been determined from the Franz-Kledysh oscillations and expressed in effective bowing parameters b. Pseudomorphically stressed GaInN on GaN: b=2.6 eV (PR) and b=3.2 eV (PL). The strain free condition is extrapolated to b=3.8 eV Previously reported smaller values of b are discussed.

This item is cited by the following items in the database:

  1. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  2. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
  3. Influence of Poisson’s ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
  4. Development of High Power Green Light Emitting Diode Chips

Contributed by Christian Wetzel from proxy.meijo-u.ac.jp. on Tuesday, October 13, 1998 7:48:41 PM

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