Data for reference maeda-apl-73-1856Two-dimensional electron-gas density in AlxGa1–xN/GaN heterostructure field-effect transistors
N. Maeda, T. Nishida, N. Kobayashi, M. Tomizawa
Applied Physics Letters 73, 1856 (1998).
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- Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
Contributed by A submitted manuscript, on Wednesday, July 28, 1999 11:27:45 AM
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