Data for reference wisniewski-apl-73-1760

Investigation of optically active E1 transverse optical phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance

P. Wisniewski, W. Knapp, J. P. Malzac, J. Camassel, M. D. Bremser, R. F. Davis, T. Suski

Applied Physics Letters 73, 1760 (1998).

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This item is cited by the following items in the database:

  1. Optical phonons and free-carrier effects in MOVPE grown AlxGa1-xN measured by Infrared Ellipsometry

Contributed by A submitted manuscript, on Tuesday, September 28, 1999 11:05:05 PM

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