Data for reference zeng-apl-73-1724

Collective effects of interface roughness and alloy disorder in InxGa1-xN/GaN multiple quantum wells

K. C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang

Applied Physics Letters 73, 1724 (1998).

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This item is cited by the following items in the database:

  1. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures

Contributed by A submitted manuscript, on Monday, November 8, 1999 10:52:20 AM

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