Data for reference haffouz-apl-73-1278

The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

S. Haffouz, H. Lahrèche, P. Vennéguès, B. Beaumont, F. Omnès, P. Gibart

Applied Physics Letters 73, 1278 (1998).

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This item is cited by the following items in the database:

  1. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A submitted manuscript, on Thursday, November 7, 2002 11:09:16 AM

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