Data for reference grandjean-apl-73-1260GaN/AlxGa1-xN quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scale
N. Grandjean, J. Massies
Applied Physics Letters 73(9), 1260 (1998).
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- X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
Contributed by A submitted manuscript, on Wednesday, October 21, 1998 1:16:38 PM
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