venugopalan-apl-73-1242

Data for reference venugopalan-apl-73-1242

Thermally stable rhenium Schottky contacts to n-GaN

H. S. Venugopalan, S. E. Mohney

Applied Physics Letters 73(9), 1242 (1998).

The Schottky characteristics of Re contacts on n-GaN were examined by I-V and C-V measurements as a function of short term annealing up to 700 �C. The barrier height increased on annealing to 500 �C. The barrier height of Re/n-GaN Schottky contacts at 500 �C was determined by I-V and C-V measurements to be 0.82 eV and 1.06 eV, respectively. On further annealing at temperatures as high as 700 �C, the barrier height remained constant. The Re Schottky contact has potential for use in high temperature electronics.

Contributed by Hari S. Venugopalan from contact.metsce.psu.edu. on Tuesday, September 8, 1998 5:43:39 PM

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