Data for reference li-apl-73-1179

GaN epitaxial lateral overgrowth and optical characterization

X Li, SG Bishop, JJ Coleman

Applied Physics Letters 73(9), 1179 (1998).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by H. Marchand from mocvd-pc.ece.ucsb.edu. on Saturday, January 30, 1999 7:15:11 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 3:02:33 PM.
© 1998 The Materials Research Society