Data for reference cho-apl-73-1128

Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells

Y. H. Cho, J. J. Song, S. Keller, M. S. Minsky, E. Hu, U. K. Mishra, S. P. DenBaars

Applied Physics Letters 73, 1128 (1998).

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This item is cited by the following items in the database:

  1. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures

Contributed by A submitted manuscript, on Monday, November 8, 1999 10:53:52 AM

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