Data for reference levinshtein-apl-73-1089

AlGaN/GaN High Electron Mobility Field Effect Transistors with Low 1/f Noise

M. E. Levinshtein, S. L. Rumyantsev, R. Gaska, J. W. Yang, M. S. Shur

Applied Physics Letters 73(8), 1089 (1998).

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This item is cited by the following items in the database:

  1. The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors

Contributed by Remis Gaska from remis.apaoptics.com. on Friday, December 18, 1998 4:42:49 PM

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