Data for reference beaumont-apl-72-921

Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy

B. Beaumont, S; Haffouz, P. Gibart

Applied Physics Letters 72(8), 921 (1998).

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This item is cited by the following items in the database:

  1. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  2. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

Contributed by A submitted manuscript, on Wednesday, July 22, 1998 1:14:49 PM

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