Data for reference chen-apl-72-710

Pit formation in GaInN quantum wells

Y Chen, T Takeuchi, H Amano, I Akasaki, N Yamada, Y Kaneko, SY Wang

Applied Physics Letters 72(6), 710 (1998).

 

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This item is cited by the following items in the database:

  1. Pinholes, Dislocations and Strain Relaxation in InGaN
  2. Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study

Contributed by B. Jahnen from hugo.fen.baynet.de. on Sunday, July 12, 1998 6:54:29 AM

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