Data for reference wu-apl-72-692

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

XH Wu, CR Elsass, A Abare, M Mack, S Keller, PM Petroff, SP DenBaars, JS Speck

Applied Physics Letters 72(6), 692 (1998).

 

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This item is cited by the following items in the database:

  1. Pinholes, Dislocations and Strain Relaxation in InGaN
  2. Development of High Power Green Light Emitting Diode Chips
  3. Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study

Contributed by B. Jahnen from hugo.fen.baynet.de. on Sunday, July 12, 1998 7:26:27 AM

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