Data for reference osinsky-apl-72-551

Visible-Blind GaN Schottky Barrier Detectors Grown on Si(111)

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, R. M. Kolbas

Applied Physics Letters 72(5), 551 (1998).

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This item is cited by the following items in the database:

  1. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by Remis Gaska from remis.apaoptics.com. on Friday, December 18, 1998 5:07:46 PM

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