Data for reference guha-apl-72-415

Ultraviolet and violet GaN light emitting diodes on silicon

S. Guha, N. A. Bojarczuk

Applied Physics Letters 72(4), 415 (1998).

Light emitting diode operation is achieved by using the conducting Si(111) substrate as a backside n contact and a standard transparent Ni/Au p contact.

This item is cited by the following items in the database:

  1. Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface
  2. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by A submitted manuscript, on Friday, July 31, 1998 12:43:34 AM

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