Data for reference mesrine-apl-72-350

Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

M. Mesrine, N. Grandjean, J. Massies

Applied Physics Letters 72(3), 350 (1998).

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This item is cited by the following items in the database:

  1. Current status of GaN crystal growth by sublimation sandwich technique
  2. Novel approach to simulation of group-III nitrides growth by MOVPE

Contributed by A submitted manuscript, on Monday, August 31, 1998 7:06:12 PM

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