Data for reference shen-apl-72-344The formation of GaN dots on Al xGa1-xN surfaces using Si in gas-source molecular beam epitaxy
XQ Shen, S Tanaka, S Iwai, Y Aoyagi
Applied Physics Letters 72(3), 344 (1998).
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This item is cited by the following items in the database:
- Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
- Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
- Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
Contributed by H. Marchand from montreal.ucsb.edu. on Thursday, February 11, 1999 4:41:15 PM
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