Data for reference deguchi-apl-72-3329

Luminescence spectra from InGaN multiquantum wells heavily doped with Si,

T. Deguchi, A. Shikanai, K. Torii, T. Sota, S. Chichibu, S. Nakamura

Applied Physics Letters 72, 3329 (1998).

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This item is cited by the following items in the database:

  1. Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
  2. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures

Contributed by A submitted manuscript, on Thursday, August 26, 1999 5:13:09 PM

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