Data for reference hansen-apl-72-2247

Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition

PJ Hansen, YE Strausser, AN Erickson, EJ Tarsa, P Kozodoy, EG Brazel, JP Ibbetson, U Mishra, V Narayanamurti, SP DenBaars, JS Speck

Applied Physics Letters 72(18), 2247 (1998).

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This item cites the following items in the database:

  1. Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition

This item is cited by the following items in the database:

  1. Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
  2. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

Contributed by R. M. Feenstra from stm1.phys.cmu.edu. on Tuesday, July 21, 1998 1:48:59 PM

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