Data for reference smith-apl-72-2114

Determination of wurtzite GaN lattice polarity based on surface reconstruction

A. R. Smith, R. M. Feenstra, D. W. Greve, M. S. Shin, M. Skowronski, J. Neugebauer, J. E. Northrup

Applied Physics Letters 72(17), 2114 (1998).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. The Polarity of GaN: a Critical Review
  2. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  3. Structure and composition of GaN (0001) A and B surfaces
  4. Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
  5. Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

Contributed by A submitted manuscript, on Tuesday, May 19, 1998 5:07:13 PM


If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.


MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 5:38:45 PM.
© 1998 The Materials Research Society