Data for reference nakamura-apl-72-2014

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

Shuji Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho

Applied Physics Letters 72(16), 2014 (1998).

InGaN multi-quantum-well-structure laser diodes (LDs) grown on GaN substrates were demonstrated.

This item is cited by the following items in the database:

  1. The role of piezoelectric fields in GaN-based quantum wells
  2. Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  3. High-temperature structural behavior of Ni/Au Contact on GaN(0001)

Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on Tuesday, April 21, 1998 1:00:03 PM
Modified by Chong Cook Kim from apnc108.216.216.211.in-addr.arpa. on Thursday, January 18, 2001 8:49:21 AM

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