torvik-apl-72-1371

Data for reference torvik-apl-72-1371

Electrical characterization of GaN/SiC n-p heterojunction diodes

John T. Torvik, M. Leksono, J. I. Pankove, B. Van Zeghbroeck, H. M. Ng, T. Moustakas

Applied Physics Letters 72(11), 1371 (1998).

The authors report on the electrical characteristics of GaN/SiC heterojunction diodes.

This item is cited by the following items in the database:

A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

Contributed by A submitted manuscript, on Tuesday, February 9, 1999 7:20:36 PM

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