Data for reference korakakis-apl-72-1004

X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes

D. Korakakis, K. F. Ludwig, T. D. Moustakas

Applied Physics Letters 72(9), 1004 (1998).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.

Contributed by A submitted manuscript, on Tuesday, July 21, 1998 11:59:27 AM


If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.


MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 10:33:10 AM.
© 1998 The Materials Research Society