Data for reference smith-apl-71-635Room temperature intrinsic optical transition in GaN epilayers: the band-to-band versus excitonic transitions
M Smith, JY Lin, HX Jiang, MA Khan
Applied Physics Letters 71(5), 635 (1997).
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This item is cited by the following items in the database:
- Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
- Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on August 30, 1997 6:18:56 PM
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