Data for reference brandt-apl-71-473

Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy

O. Brandt, H. Yang, A. Trampert, M. Wassermeier, K. H. Ploog

Applied Physics Letters 71, 473 (1997).

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This item is cited by the following items in the database:

  1. Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

Contributed by A submitted manuscript, on Wednesday, July 1, 1998 12:22:55 PM

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