Data for reference smith-apl-71-3631High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
SA Smith, CA Woldren, MD Bremser, AD Hanser, RF Davis, WV Lampert
Applied Physics Letters 71(25), 3631 (1997).
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Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on December 18, 1997 2:03:49 PM
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