Data for reference smith-apl-71-3631

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

SA Smith, CA Woldren, MD Bremser, AD Hanser, RF Davis, WV Lampert

Applied Physics Letters 71(25), 3631 (1997).

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Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on December 18, 1997 2:03:49 PM


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