Data for reference gwo-apl-71-362

Atomic-scale nature of the (3x3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy

S. Gwo, H. Tokumoto, S Miwa

Applied Physics Letters 71, 362 (1997).

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This item is cited by the following items in the database:

  1. Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

Contributed by A submitted manuscript, on Wednesday, July 1, 1998 12:23:09 PM

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