Data for reference kobayashi-apl-71-3569

GaN growth on Si (111) substrate using oxidized AlAs as an intermediate layer

N. P. Kobayashi, J. T. Kobayashi, P. D. Dapkus, W. J. Choi, A. E. Bond, X. Zhang, D. H. Rich

Applied Physics Letters 71(24), 3569 (1997).

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This item is cited by the following items in the database:

  1. Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface
  2. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by A submitted manuscript, on Friday, July 31, 1998 12:43:50 AM

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