Data for reference romano-apl-71-3486

The influence of inversion domains on surface morphology in GaN grown by molecular beam epitaxy

L. T. Romano, T. H. Myers

Applied Physics Letters 71, 3486 (1997).

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This item is cited by the following items in the database:

  1. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  2. The Polarity of GaN: a Critical Review
  3. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by R. Held from pc22.ece.umn.edu. on February 24, 1998 9:20:47 PM

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