Data for reference heinlein-apl-71-341

Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation

C. Heinlein, J. Grepstad, T. Berge, H. Riechert

Applied Physics Letters 71(3), 341 (1997).

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This item is cited by the following items in the database:

  1. Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
  2. Review of polarity determination and control of GaN

Contributed by A submitted manuscript, on Friday, July 17, 1998 5:48:41 PM

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