Data for reference han-apl-71-3114

The effect of H[sub 2] on morphology evolution during GaN metalorganic chemical vapor deposition

J. Han, T. -B. Ng, R. M. Biefeld, M. H. Crawford, D. M. Follstaedt

Applied Physics Letters 71, 3114 (1997).

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This item is cited by the following items in the database:

  1. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
  2. Review of polarity determination and control of GaN

Contributed by A submitted manuscript, on Thursday, November 7, 2002 11:10:19 AM

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