Data for reference hamdani-apl-71-3111Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO
F. Hamdani, A. E. Botchkarev, H. Tang, W. Kim, H. Morkoç
Applied Physics Letters 71(21), 3111 (1997).
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- The Polarity of GaN: a Critical Review
Contributed by A submitted manuscript, on Tuesday, May 19, 1998 5:05:26 PM
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