Data for reference ruvimov-apl-71-2931

Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy

S. Ruvimov, Z. Liliental-Weber, J. Washburn, T. J. Drummond, M. Hafich, S. R. Lee

Applied Physics Letters 71, 2931 (1997).

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This item is cited by the following items in the database:

  1. Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

Contributed by A submitted manuscript, on Wednesday, July 1, 1998 12:23:36 PM

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