Data for reference yu-apl-71-2794

Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, S. S. Lau

Applied Physics Letters 71, 2794 (1997).

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This item is cited by the following items in the database:

  1. The role of piezoelectric fields in GaN-based quantum wells
  2. 300°ree;C GaN/AlGaN Heterojunction Bipolar Transistor

Contributed by A submitted manuscript, on Friday, July 10, 1998 11:13:44 PM

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