Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Applied Physics Letters 71(18), 2638 (1997).

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This item cites the following items in the database:

1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Enmitting Diodes
2. InGaN MQW Structure Laser Diodes with Cleaved Mirror Facets
3. Growth of GaN and Al_0.2Ga_0.8N on Patterened Substrates via Organometallic Vapor Phase Epitaxy
4. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
5. GaN thin films deposited via organometallic vapor phase epitaxy on alpha (6H)-SiC(0001) using high-temperature monocrystalline AlN buffer layers

This item is cited by the following items in the database:

1. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
2. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
3. Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
4. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
5. Localized Epitaxy of GaN by HVPE on patterned Substrates
6. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
7. Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
8. Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates

Contributed by Hugues Marchand from morgana.ucsb.edu. on February 4, 1998 8:16:39 PM

last updated Wednesday, April 27, 2005 5:24:08 PM.
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