Data for reference siegle-apl-71-2490

Vertical strain and doping gradients in thick GaN layers

H. Siegle, A. Hoffman, L. Eckey, C. Thomsen, J. Christen, F. Bertram, D. Schmidt, D. Rudloff, K. Hiramatsu

Applied Physics Letters 71, 2490 (1997).

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This item is cited by the following items in the database:

  1. Effect of internal absorption on cathodoluminescence from GaN
  2. Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.

Contributed by A submitted manuscript, on January 29, 1998 11:44:08 AM

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