Data for reference zheleva-apl-71-2472

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

TS Zheleva, O-H Nam, MD Bremser, RF Davis

Applied Physics Letters 71(17), 2472 (1997).

Hexagonal GaN pyramids are grown from holes in an SiO2 mask. TEM shows that the dislocation density is reduced in the overgrown areas.

This item cites the following items in the database:

  1. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
  2. Growth of GaN and Al0.2Ga0.8N on Patterened Substrates via Organometallic Vapor Phase Epitaxy
  3. Undoped and doped GaN thin films deposited on high- temperature monocrystalline AlN buffer layers on vicinal and on-axis alpha(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy

This item is cited by the following items in the database:

  1. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
  2. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  3. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  4. Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
  5. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  6. Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  7. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  8. Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates

Contributed by E. S. Hellman from 207.77.104.97 on November 19, 1997 1:25:53 PM
Modified by H. Marchand from mocvd-pc.ece.ucsb.edu. on Saturday, January 30, 1999 6:12:45 PM

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