Data for reference chichibu-apl-71-2346

Spatially resolved cathodoluminescence spectra of InGaN quantum wells

Shigefusa Chichibu, Kazumi Wada, Shuji Nakamura

Applied Physics Letters 71(16), 2346 (1997).

Monochromatic CL images and sopt CL spectra of InGaN SQWs are shown. The lateral size of the origin of the carrier/exciton localized was determined to be less than 60 nm.

This item is cited by the following items in the database:

  1. The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells
  2. Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.

Contributed by Shigefusa Chichibu from 128.111.9.214 on Thursday, May 7, 1998 5:49:02 AM


If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.


MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 7:29:57 PM.
© 1998 The Materials Research Society