Defect structure in selectively grown GaN films with low threading dislocation density

Applied Physics Letters 71(16), 2259 (1997).

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This item cites the following items in the database:

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Shortest wavelength semiconductor laser diode
3. Room Temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates
4. High dislocation densities in high efficiency GaN-based light-emitting diodes
5. Growth of GaN(0001)1 (times) 1 on Al₂O₃(0001) by gas-source molecular beam epitaxy
6. Microstructural characterization of alpha -GaN films grown on sapphire by organometallic vapor phase epitaxy
7. Growth defects in GaN films on sapphire: The probable origin of threading dislocations
8. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
9. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

This item is cited by the following items in the database:

1. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
2. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
3. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
4. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by Hugues Marchand from morgana.ucsb.edu. on February 4, 1998 8:34:33 PM

last updated Monday, May 2, 2005 5:37:06 PM.
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