Data for reference xu-apl-71-2154High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures
G. Y. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoc, G. Smith, M. Estes, B. Goldberg, W. Yank, S. Krishnankutty:
Applied Physics Letters 71, 2154 (1997).
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- Preparation of Sapphire for High Quality III-Nitride Growth
Contributed by A submitted manuscript, on Thursday, June 8, 2000 9:57:47 AM
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