Data for reference angerer-apl-71-1504Determination of the Al mole fraction and band gap bowing of epitaxial AlGaN films
H. Angerer, D. Brunner, F. Freudenberg, O. Ambacher, M. Stutzman, R. Hopler, T. Metzger, E. Born, G. Dollinger, A. Bergmaier, S. Karsch, H. -J. Korner
Applied Physics Letters 71, 1504 (1997).
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This item is cited by the following items in the database:
- Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
- Raman study of resonance effects in Ga1-xAlxN solid solutions
Contributed by A submitted manuscript, on March 6, 1998 6:57:07 PM
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